Input Capacitance (Cies) @ Vce 14.1nF @ 25V
Gate-Emitter Voltage-Max 20V
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 1210 ns
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 200A
Collector Emitter Saturation Voltage 1.5V
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 25μA
Max Collector Current 283A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Terminal Form UNSPECIFIED
Max Power Dissipation 682W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ