Gate-Emitter Thr Voltage-Max 6.5V
Input Capacitance (Cies) @ Vce 9.2nF @ 25V
Gate-Emitter Voltage-Max 30V
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 575 ns
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 150A
Collector Emitter Saturation Voltage 1.5V
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 50μA
Max Collector Current 220A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 430 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Terminal Form UNSPECIFIED
Max Power Dissipation 536W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH RELIABILITY, UL RECOGNIZED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ