Input Capacitance (Cies) @ Vce 9.5nF @ 25V
Gate-Emitter Voltage-Max 30V
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 955 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 150A
Collector Emitter Saturation Voltage 1.7V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 100μA
Max Collector Current 215A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Terminal Form UNSPECIFIED
Max Power Dissipation 625W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS, UL RECOGNIZED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ