Input Capacitance (Cies) @ Vce 6.5nF @ 25V
Gate-Emitter Voltage-Max 30V
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 935 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Collector Emitter Saturation Voltage 1.7V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 100μA
Max Collector Current 153A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Terminal Form UNSPECIFIED
Max Power Dissipation 446W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH RELIABILITY
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ