Input Capacitance (Cies) @ Vce 3.3nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 570 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 3.7mA
Max Collector Current 92A
Collector Emitter Voltage (VCEO) 3.2V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Element Configuration Dual
Configuration Half Bridge
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Max Power Dissipation 379W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Gold (Au) - with Nickel (Ni) barrier
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ