Input Capacitance (Cies) @ Vce 4.2nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 180 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 130A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 1.2mA
Max Collector Current 121A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 150 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Dual
Configuration Half Bridge
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Max Power Dissipation 379W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Gold (Au) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ