MWI75-12T7T
RoHS 
RoHS compliant
RoHS compliantPackage E2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 110A 355W E2
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 5.35nF @ 25V
NTC Thermistor Yes
IGBT Type Trench
Turn Off Time-Nom (toff) 610 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 75A
Turn On Time 340 ns
Input Capacitance 5.35nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 4mA
Max Collector Current 110A
Collector Emitter Voltage (VCEO) 2.15V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 355W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
Qualification Status Not Qualified
Pin Count 28
Base Part Number MWI
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 355W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Number of Terminations 21
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2010
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 2
Package / Case E2
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
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