MWI75-12A8
RoHS 
RoHS compliant
RoHS compliantPackage E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
MOD IGBT SIXPACK RBSOA 1200V E3
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Technical Details
Supply Chain
Factory Lead Time 32 Weeks
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case E3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 33
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 500W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number MWI
Pin Count 33
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 500W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 125A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 5.5nF
Turn On Time 150 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 75A
Turn Off Time-Nom (toff) 700 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 5.5nF @ 25V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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