MWI75-06A7T
RoHS 
RoHS compliant
RoHS compliantPackage E2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
MOD IGBT SIXPACK RBSOA 600V E2
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Technical Details
Technical
Number of Terminations 13
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 280W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MWI
Pin Count 19
JESD-30 Code R-XUFM-X13
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Turn On Delay Time 50 ns
Power - Max 280W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Turn-Off Delay Time 270 ns
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 90A
Current - Collector Cutoff (Max) 1.3mA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 3.2nF
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 75A
Turn Off Time-Nom (toff) 310 ns
IGBT Type NPT
NTC Thermistor Yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2007
Operating Temperature -40°C~150°C TJ
Input Capacitance (Cies) @ Vce 3.2nF @ 25V
Physical
Transistor Element Material SILICON
Number of Pins 2
Package / Case E2
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 20 Weeks
Dimensions
Height 17mm
Length 107.5mm
Width 45mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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