MWI75-06A7
RoHS 
RoHS compliant
RoHS compliantPackage E2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 600V 90A 18-Pin E2
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Dimensions
Width 45mm
Length 107.5mm
Height 17mm
Technical
VCEsat-Max 2.6 V
Input Capacitance (Cies) @ Vce 3.2nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type NPT
Turn Off Time-Nom (toff) 310 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 75A
Turn On Time 100 ns
Input Capacitance 3.2nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 1.3mA
Max Collector Current 90A
Collector Emitter Voltage (VCEO) 600V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 280W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
JESD-30 Code R-XUFM-X11
Pin Count 17
Base Part Number MWI
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 280W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 11
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2007
Packaging Bulk
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 18
Package / Case E2
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
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