MWI50-12T7T
RoHS 
RoHS compliant
RoHS compliantPackage E2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 80A 270W E2
PDF
/
Inventory: 3089
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E2
Number of Pins 2
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~125°C TJ
Published 2010
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 270W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MWI
Pin Count 28
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 270W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.15V
Max Collector Current 80A
Current - Collector Cutoff (Max) 4mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 3.5nF
Turn On Time 140 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 50A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 3.5nF @ 25V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
MWI50-12T7T+price,MWI50-12T7T+datasheet,MWI50-12T7T+in stock,buy+MWI50-12T7T,finder+MWI50-12T7T,MWI50-12T7T+tutorials,MWI50-12T7T+download