MWI50-12E7
RoHS 
RoHS compliant
RoHS compliantPackage E2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
MOD IGBT SIXPACK H-BRDG 1200V E2
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 3.8nF @ 25V
NTC Thermistor No
IGBT Type NPT
Turn Off Time-Nom (toff) 710 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 50A
Turn On Time 130 ns
Input Capacitance 3.8nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 800μA
Max Collector Current 90A
Collector Emitter Voltage (VCEO) 2.4V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 350W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
JESD-30 Code R-XUFM-P11
Pin Count 17
Base Part Number MWI
Terminal Form PIN/PEG
Terminal Position UPPER
Max Power Dissipation 350W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL REGONIZED
Terminal Finish Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 11
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2007
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 2
Package / Case E2
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 26 Weeks
Alternative Model
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