MWI50-12A7
RoHS 
RoHS compliant
RoHS compliantPackage E2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
MOD IGBT SIXPACK RBSOA 1200V E2
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 3.3nF @ 25V
NTC Thermistor No
IGBT Type NPT
Turn Off Time-Nom (toff) 570 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 50A
Turn On Time 170 ns
Input Capacitance 3.3nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 4mA
Max Collector Current 85A
Collector Emitter Voltage (VCEO) 2.7V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 350W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
JESD-30 Code R-XUFM-X11
Pin Count 17
Base Part Number MWI
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 350W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 11
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2007
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 2
Package / Case E2
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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