MWI50-06A7T
RoHS 
RoHS compliant
RoHS compliantPackage E2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 600V 72A 18-Pin E2
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case E2
Number of Pins 2
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 13
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 225W
Terminal Position UPPER
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MWI
Pin Count 17
JESD-30 Code R-XUFM-P13
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 225W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 72A
Current - Collector Cutoff (Max) 600μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 2.8nF
Turn On Time 110 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 50A
Turn Off Time-Nom (toff) 330 ns
IGBT Type NPT
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2.8nF @ 25V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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