MWI451-17E9
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE E9PACK
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
VCEsat-Max 2.65 V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
Collector-Emitter Voltage-Max 1700V
Turn Off Time-Nom (toff) 870 ns
Collector Current-Max (IC) 580A
Turn On Time 190 ns
Power Dissipation-Max (Abs) 2200W
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection ISOLATED
Configuration 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Number of Elements 6
JESD-30 Code R-XUFM-X29
Base Part Number MWI
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Number of Terminations 29
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2011
Packaging Bulk
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Package / Case Module
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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