MWI450-12E9
RoHS
/
Package E+
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 640A 2200W E+
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 33nF @ 25V
NTC Thermistor Yes
IGBT Type NPT
Turn Off Time-Nom (toff) 575 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 450A
Turn On Time 306 ns
Input Capacitance 33nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 1mA
Max Collector Current 640A
Collector Emitter Voltage (VCEO) 2.4V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 2200W
Case Connection ISOLATED
Configuration Three Phase
Number of Elements 6
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X17
Pin Count 29
Base Part Number MWI
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 2.2kW
Terminal Finish Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 17
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2010
Packaging Bulk
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Package / Case E+
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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