MWI300-17E9
RoHS 
RoHS compliant
RoHS compliantPackage E+
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1700V 500A 2200W E+
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 33nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type NPT
Turn Off Time-Nom (toff) 610 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 300A
Turn On Time 290 ns
Input Capacitance 33nF
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
Current - Collector Cutoff (Max) 1mA
Max Collector Current 500A
Collector Emitter Voltage (VCEO) 2.7V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 2200W
Case Connection ISOLATED
Configuration Three Phase
Number of Elements 6
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X17
Pin Count 29
Base Part Number MWI
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 2.2kW
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 17
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2007
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 29
Package / Case E+
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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