MWI30-12E6K
RoHS
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Package E1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
MOD IGBT SIXPACK RBSOA 1200V E1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 1.18nF @ 25V
NTC Thermistor Yes
Turn Off Time-Nom (toff) 410 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 20A
Turn On Time 140 ns
Input Capacitance 1.18nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 1mA
Max Collector Current 29A
Collector Emitter Voltage (VCEO) 2.9V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 130W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
Qualification Status Not Qualified
Pin Count 23
Base Part Number MWI
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 130W
Additional Feature UL RECOGNIZED
Terminal Finish Tin (Sn)
Number of Terminations 19
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2007
Packaging Bulk
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 1
Package / Case E1
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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