MWI25-12A7
RoHS 
RoHS compliant
RoHS compliantPackage E2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 1.2KV 50A 24-Pin E2-Pack
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 1.65nF @ 25V
NTC Thermistor No
IGBT Type NPT
Turn Off Time-Nom (toff) 570 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 25A
Turn On Time 170 ns
Input Capacitance 1.65nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 2mA
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 2.7V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 225W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
JESD-30 Code R-XUFM-X11
Pin Count 20
Base Part Number MWI
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 225W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 11
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2008
Packaging Bulk
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 2
Package / Case E2
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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