Input Capacitance (Cies) @ Vce 6.5nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 260 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 150A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 1.5mA
Max Collector Current 170A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Configuration Three Phase Inverter
Terminal Form UNSPECIFIED
Max Power Dissipation 515W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 33
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~125°C TJ