MWI100-12T8T
RoHS 
RoHS compliant
RoHS compliantPackage E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 145A 480W E3
PDF
/
Inventory: 2938
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 7.21nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type Trench
Turn Off Time-Nom (toff) 740 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Turn On Time 320 ns
Input Capacitance 7.21nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 4mA
Max Collector Current 145A
Collector Emitter Voltage (VCEO) 2.1V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 480W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X21
Pin Count 35
Base Part Number MWI
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 480W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Number of Terminations 21
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2010
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case E3
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 32 Weeks
Alternative Model
Recommended For You
MWI100-12T8T+price,MWI100-12T8T+datasheet,MWI100-12T8T+in stock,buy+MWI100-12T8T,finder+MWI100-12T8T,MWI100-12T8T+tutorials,MWI100-12T8T+download