MWI100-12E8
RoHS
/
Package E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
MOD IGBT SIXPACK RBSOA 1200V E3
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Technical Details
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
Terminal Finish Tin (Sn) - with Nickel (Ni) barrier
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 640W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number MWI
Pin Count 19
JESD-30 Code R-XUFM-X11
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 640W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 165A
Current - Collector Cutoff (Max) 1.4mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 7.4nF
Turn On Time 345 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 100A
Turn Off Time-Nom (toff) 795 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 7.4nF @ 25V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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