MWI100-12A8
RoHS 
RoHS compliant
RoHS compliantPackage E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
MOD IGBT SIXPACK RBSOA 1200V E3
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 6.5nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type NPT
Turn Off Time-Nom (toff) 690 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 100A
Turn On Time 160 ns
Input Capacitance 6.5nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 6.3mA
Max Collector Current 160A
Collector Emitter Voltage (VCEO) 2.6V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 640W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
JESD-30 Code R-XUFM-X19
Pin Count 19
Base Part Number MWI
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 640W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 19
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2007
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case E3
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
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