MUBW6-06A6
RoHS 
RoHS compliant
RoHS compliantPackage E1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 600V 7A 38W E1
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Technical Details
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case E1
Number of Pins 25
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
Terminal Finish Matte Tin (Sn)
Additional Feature FAST
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 38W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MUBW
Pin Count 25
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 38W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 7A
Current - Collector Cutoff (Max) 10μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 340pF
Turn On Time 40 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A
Turn Off Time-Nom (toff) 360 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 0.34nF @ 25V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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