MUBW50-12E8
RoHS
/
Package E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 90A 350W E3
PDF
/
Inventory: 5592
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 3.8nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
Turn Off Time-Nom (toff) 710 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 50A
Turn On Time 130 ns
Input Capacitance 3.8nF
Reverse Voltage 1.6kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 800μA
Max Collector Current 90A
Collector Emitter Voltage (VCEO) 2.4V
Input Three Phase Bridge Rectifier
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 350W
Case Connection ISOLATED
Configuration Three Phase Inverter with Brake
Number of Elements 7
Qualification Status Not Qualified
Pin Count 35
Base Part Number MUBW
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 350W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 35
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2003
Packaging Box
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case E3
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
Recommended For You
MUBW50-12E8+price,MUBW50-12E8+datasheet,MUBW50-12E8+in stock,buy+MUBW50-12E8,finder+MUBW50-12E8,MUBW50-12E8+tutorials,MUBW50-12E8+download