MUBW50-12A8
RoHS 
RoHS compliant
RoHS compliantPackage E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 85A 350W E3
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Buying Options
Total Price: USD $311.43
Unit Price: USD $311.42907
≥1 USD $311.42907
≥200 USD $124.262046
≥500 USD $120.110657
≥1000 USD $118.058594
Inventory: 2006
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 3.3nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type NPT
Turn Off Time-Nom (toff) 570 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 50A
Turn On Time 170 ns
Input Capacitance 3.3nF
Reverse Voltage 1.6kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 3.7mA
Max Collector Current 85A
Collector Emitter Voltage (VCEO) 2.6V
Input Three Phase Bridge Rectifier
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 350W
Case Connection ISOLATED
Configuration Three Phase Inverter with Brake
Number of Elements 7
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X24
Pin Count 24
Base Part Number MUBW
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 350W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 24
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2007
Packaging Bulk
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case E3
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
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