MUBW45-12T6K
RoHS 
RoHS compliant
RoHS compliantPackage E1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 43A 160W E1
PDF
/
Inventory: 9175
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 1.81nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type Trench
Turn Off Time-Nom (toff) 610 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 45A
Turn On Time 140 ns
Input Capacitance 1.81nF
Reverse Voltage 1.6kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 1.25mA
Max Collector Current 43A
Collector Emitter Voltage (VCEO) 3.1V
Input Three Phase Bridge Rectifier
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 160W
Case Connection ISOLATED
Configuration Three Phase Inverter with Brake
Number of Elements 7
Qualification Status Not Qualified
Pin Count 25
Base Part Number MUBW
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 160W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 21
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2013
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 1
Package / Case E1
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
Recommended For You
MUBW45-12T6K+price,MUBW45-12T6K+datasheet,MUBW45-12T6K+in stock,buy+MUBW45-12T6K,finder+MUBW45-12T6K,MUBW45-12T6K+tutorials,MUBW45-12T6K+download