MUBW35-06A6
RoHS
/
Package E1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 600V 38A 104W E1
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Technical Details
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case E1
Number of Pins 25
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~125°C TJ
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
Terminal Finish Matte Tin (Sn)
Additional Feature FAST
Subcategory Insulated Gate BIP Transistors
Input Capacitance (Cies) @ Vce 1.6nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type NPT
Turn Off Time-Nom (toff) 220 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Turn On Time 65 ns
Input Capacitance 1.6nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 1mA
Max Collector Current 38A
Collector Emitter Voltage (VCEO) 2.5V
Input Three Phase Bridge Rectifier
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 104W
Case Connection ISOLATED
Configuration Three Phase Inverter with Brake
Number of Elements 7
Qualification Status Not Qualified
Pin Count 25
Base Part Number MUBW
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 104W
Compliance
RoHS Status RoHS Compliant
Alternative Model
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