MUBW30-12A6K
RoHS 
RoHS compliant
RoHS compliantPackage E1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 30A 130W E1
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Buying Options
Total Price: USD $107.26
Unit Price: USD $107.257366
≥1 USD $107.257366
≥200 USD $41.507334
≥500 USD $40.048702
≥1000 USD $39.32792
Inventory: 1138
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case E1
Number of Pins 1
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
Terminal Finish Matte Tin (Sn)
Additional Feature UL RECOGNIZED
Max Power Dissipation 130W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MUBW
Pin Count 25
JESD-30 Code R-XUFM-X25
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 130W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 3.8V
Max Collector Current 30A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Reverse Voltage 1.6kV
Input Capacitance 1nF
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 3.8V @ 15V, 30A
Turn Off Time-Nom (toff) 570 ns
IGBT Type NPT
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 1nF @ 25V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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