MUBW30-06A7
RoHS 
RoHS compliant
RoHS compliantPackage E2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 600V 50A 180W E2
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 1.6nF @ 25V
NTC Thermistor Yes
IGBT Type NPT
Turn Off Time-Nom (toff) 310 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
Turn On Time 100 ns
Input Capacitance 1.6nF
Reverse Voltage 1.6kV
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 600μA
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 2.3V
Input Three Phase Bridge Rectifier
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 180W
Case Connection ISOLATED
Configuration Three Phase Inverter with Brake
Number of Elements 7
Qualification Status Not Qualified
Base Part Number MUBW
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 180W
Additional Feature LOW SWITCHING LOSS, LOW SATURATION VOLTAGE
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 24
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2001
Packaging Bulk
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 2
Package / Case E2
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
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