MUBW25-12T7
RoHS 
RoHS compliant
RoHS compliantPackage E2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 45A 170W E2
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 1.8nF @ 25V
NTC Thermistor Yes
IGBT Type Trench
Turn Off Time-Nom (toff) 610 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 25A
Turn On Time 140 ns
Input Capacitance 1.8nF
Reverse Voltage 1.6kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 2.7mA
Max Collector Current 45A
Collector Emitter Voltage (VCEO) 2.15V
Input Three Phase Bridge Rectifier
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 170W
Case Connection ISOLATED
Configuration Three Phase Inverter with Brake
Number of Elements 7
Qualification Status Not Qualified
Pin Count 24
Base Part Number MUBW
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 170W
Additional Feature FAST SWITCHING
Terminal Finish PURE TIN OVER NICKEL
Number of Terminations 24
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2006
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 2
Package / Case E2
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 32 Weeks
Alternative Model
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