MUBW25-06A6
RoHS
/
Package E1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 600V 27.5A 77W E1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 1.1nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type NPT
Turn Off Time-Nom (toff) 230 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn On Time 65 ns
Input Capacitance 1.1nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 1mA
Max Collector Current 27.5A
Collector Emitter Voltage (VCEO) 2.5V
Input Three Phase Bridge Rectifier
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 77W
Case Connection ISOLATED
Configuration Three Phase Inverter with Brake
Number of Elements 7
Qualification Status Not Qualified
Pin Count 25
Base Part Number MUBW
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 77W
Subcategory Insulated Gate BIP Transistors
Additional Feature FAST
Terminal Finish Matte Tin (Sn)
Number of Terminations 25
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2000
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 25
Package / Case E1
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
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