MUBW10-06A6K
RoHS 
RoHS compliant
RoHS compliantPackage E1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 600V 11A 50W E1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 0.22nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type NPT
Turn Off Time-Nom (toff) 320 ns
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 10A
Turn On Time 40 ns
Input Capacitance 220pF
Reverse Voltage 1.6kV
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 65μA
Max Collector Current 11A
Collector Emitter Voltage (VCEO) 3.3V
Input Three Phase Bridge Rectifier
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 50W
Case Connection ISOLATED
Configuration Three Phase Inverter with Brake
Number of Elements 7
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X25
Pin Count 25
Base Part Number MUBW
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 50W
Subcategory Insulated Gate BIP Transistors
Terminal Finish PURE TIN
Number of Terminations 25
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2009
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 1
Package / Case E1
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
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