MKI100-12F8
RoHS 
RoHS compliant
RoHS compliantPackage E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
MOD IGBT H-BRIDGE 1200V 125A E3
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Buying Options
Total Price: USD $140.54
Unit Price: USD $140.5448
≥1 USD $140.5448
Inventory: 103
Minimum: 1
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Technical Details
Technical
Configuration Full Bridge Inverter
Power Dissipation 640W
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3.9V
Max Collector Current 125A
Current - Collector Cutoff (Max) 1.3mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.2kV
Input Capacitance 6.5nF
Turn On Time 190 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 100A
Turn Off Time-Nom (toff) 395 ns
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 6.5nF @ 25V
Number of Elements 4
JESD-30 Code R-XUFM-X21
Pin Count 21
Base Part Number MKI
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 640W
Additional Feature LOW SATURATION VOLTAGE, FAST SWITCHING
Number of Terminations 21
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2005
Operating Temperature -40°C~125°C TJ
Compliance
RoHS Status ROHS3 Compliant
Physical
Transistor Element Material SILICON
Package / Case E3
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
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