MIXA81H1200EH
RoHS 
RoHS compliant
RoHS compliantPackage E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT Modules IGBT Module H Bridge
PDF
/
Buying Options
Total Price: USD $203.78
Unit Price: USD $203.780461
≥1 USD $203.780461
≥200 USD $81.310523
≥500 USD $78.59282
≥1000 USD $77.249723
Inventory: 2970
Minimum: 1
-
+
Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
VCEsat-Max 2.1 V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type PT
Turn Off Time-Nom (toff) 350 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 77A
Turn On Time 110 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 200μA
Max Collector Current 120A
Collector Emitter Voltage (VCEO) 2.2V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 390W
Case Connection ISOLATED
Configuration Full Bridge Inverter
Number of Elements 4
JESD-30 Code R-XUFM-X14
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 390W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Number of Terminations 14
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2011
Packaging Bulk
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Package / Case E3
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
Recommended For You
MIXA81H1200EH+price,MIXA81H1200EH+datasheet,MIXA81H1200EH+in stock,buy+MIXA81H1200EH,finder+MIXA81H1200EH,MIXA81H1200EH+tutorials,MIXA81H1200EH+download