MIXA80W1200TEH
RoHS 
RoHS compliant
RoHS compliantPackage E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 120A 390W E3
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Buying Options
Total Price: USD $211.11
Unit Price: USD $211.111694
≥1 USD $211.111694
≥200 USD $84.235664
≥500 USD $81.420806
≥1000 USD $80.029132
Inventory: 4134
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
VCEsat-Max 2.1 V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type PT
Turn Off Time-Nom (toff) 350 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 77A
Turn On Time 110 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 200μA
Max Collector Current 120A
Collector Emitter Voltage (VCEO) 2.2V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 390W
Case Connection ISOLATED
Configuration Three Phase Inverter with Brake
Number of Elements 6
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X13
Pin Count 35
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 390W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Number of Terminations 13
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2010
Packaging Bulk
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Package / Case E3
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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