MIXA61H1200ED
RoHS 
RoHS compliant
RoHS compliantPackage E2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT Modules IGBT XPT Module H Bridge
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Buying Options
Total Price: USD $70.31
Unit Price: USD $70.312
≥1 USD $70.312
≥10 USD $64.18544
≥100 USD $58.06196
Inventory: 16
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 25 Weeks
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E2
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 290W
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X12
Number of Elements 4
Configuration Full Bridge Inverter
Power Dissipation 290W
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 85A
Current - Collector Cutoff (Max) 500μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 110 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 55A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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