MIXA60W1200TED
RoHS 
RoHS compliant
RoHS compliantPackage E2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 85A 290W E2
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Buying Options
Total Price: USD $134.24
Unit Price: USD $134.23975
≥1 USD $134.23975
≥10 USD $129.76525
≥100 USD $116.3408
Inventory: 175
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E2
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2010
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 28
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 290W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 28
JESD-30 Code R-XUFM-X28
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 290W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 85A
Current - Collector Cutoff (Max) 500μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 110 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 55A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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