MIXA40W1200TML
RoHS 
RoHS compliant
RoHS compliantPackage E1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT Modules Six-Pack XPT IGBT
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type PT
Turn Off Time-Nom (toff) 350 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
Turn On Time 110 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 150μA
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 2.1V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 195W
Case Connection ISOLATED
Configuration Three Phase Inverter with Brake
Number of Elements 6
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X13
Pin Count 24
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 195W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Number of Terminations 13
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2011
Packaging Bulk
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Package / Case E1
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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