Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 635 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 300A
Collector Emitter Saturation Voltage 1.8V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 300μA
Max Collector Current 465A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Configuration Half Bridge
Reference Standard IEC-60747
Terminal Form UNSPECIFIED
Max Power Dissipation 1.5kW
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Number of Terminations 11
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ