MIXA225RF1200TSF
RoHS 
RoHS compliant
RoHS compliantPackage Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT Modules XPT IGBT Module
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type PT
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 225A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 300μA
Max Collector Current 360A
Collector Emitter Voltage (VCEO) 2.1V
Input Standard
Power - Max 1100W
Configuration Single
Number of Elements 1
Max Power Dissipation 1.1kW
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2013
Packaging Bulk
Operating Temperature -40°C~150°C TJ
Physical
Package / Case Module
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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