MIXA20WB1200TED
RoHS 
RoHS compliant
RoHS compliantPackage E2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT Modules Converter-Brake Inverter Module
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Buying Options
Total Price: USD $128.22
Unit Price: USD $128.216501
≥1 USD $128.216501
≥198 USD $51.159774
≥498 USD $49.450379
≥1002 USD $48.604871
Inventory: 1215
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type PT
Turn Off Time-Nom (toff) 350 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 16A
Turn On Time 110 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 1.5mA
Max Collector Current 28A
Collector Emitter Voltage (VCEO) 2.1V
Input Three Phase Bridge Rectifier
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 100W
Case Connection ISOLATED
Configuration Three Phase Inverter with Brake
Number of Elements 7
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X24
Pin Count 24
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 100W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Number of Terminations 24
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2011
Packaging Bulk
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Package / Case E2
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
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