MIXA150W1200TEH
RoHS 
RoHS compliant
RoHS compliantPackage E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 220A 695W E3
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Buying Options
Total Price: USD $422.93
Unit Price: USD $422.929729
≥1 USD $422.929729
≥200 USD $168.752289
≥500 USD $163.113383
≥1000 USD $160.326096
Inventory: 5316
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type PT
Turn Off Time-Nom (toff) 350 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 150A
Turn On Time 110 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 500μA
Max Collector Current 220A
Collector Emitter Voltage (VCEO) 2.1V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 695W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X13
Pin Count 35
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 695W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Number of Terminations 13
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2011
Packaging Bulk
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Package / Case E3
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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