MIO1200-33E10
RoHS 
RoHS compliant
RoHS compliantPackage E10
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
MOD IGBT SGL SWITCH 3300V E10
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 187nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type NPT
Turn Off Time-Nom (toff) 1510 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 1200A
Turn On Time 600 ns
Input Capacitance 187nF
Current - Collector (Ic) (Max) 1200A
Voltage - Collector Emitter Breakdown (Max) 3300V
Collector Emitter Breakdown Voltage 3.3kV
Current - Collector Cutoff (Max) 120mA
Max Collector Current 1.2kA
Collector Emitter Voltage (VCEO) 3.1V
Turn-Off Delay Time 1.07 μs
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Turn On Delay Time 400 ns
Case Connection ISOLATED
Configuration Single Switch
Number of Elements 3
JESD-30 Code R-XUFM-X9
Pin Count 9
Base Part Number MIO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
Number of Terminations 9
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2011
Operating Temperature -40°C~125°C TJ
Physical
Transistor Element Material SILICON
Package / Case E10
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 25 Weeks
Alternative Model
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