MIO1200-25E10
RoHS
/
Package E10
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
MOD IGBT SGL SWITCH 2500V E10
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Technical Details
Supply Chain
Factory Lead Time 25 Weeks
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E10
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~125°C TJ
Published 2011
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number MIO
Pin Count 9
JESD-30 Code R-XUFM-X9
Number of Elements 3
Configuration Single Switch
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 1.2kA
Current - Collector Cutoff (Max) 120mA
Collector Emitter Breakdown Voltage 2.5kV
Voltage - Collector Emitter Breakdown (Max) 2500V
Current - Collector (Ic) (Max) 1200A
Input Capacitance 186nF
Turn On Time 615 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 1200A
Turn Off Time-Nom (toff) 1325 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 186nF @ 25V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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