Input Capacitance (Cies) @ Vce 3.3nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 570 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 4mA
Max Collector Current 90A
Collector Emitter Voltage (VCEO) 2.7V
Turn-Off Delay Time 500 ns
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Turn On Delay Time 100 ns
Element Configuration Dual
Configuration Half Bridge
Terminal Form UNSPECIFIED
Max Power Dissipation 370W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ