MII300-12E4
RoHS
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Package Y3-Li
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 280A 1100W Y3LI
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Inventory: 1504
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Technical Details
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Y3-Li
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
Additional Feature FAST SWITCHING, LOW SATURATION VOLTAGE
Max Power Dissipation 1.1kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number MII
Pin Count 11
JESD-30 Code R-XUFM-X11
Number of Elements 2
Configuration Half Bridge
Case Connection ISOLATED
Power - Max 1100W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 280A
Current - Collector Cutoff (Max) 3.3mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 11nF
Turn On Time 230 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 200A
Turn Off Time-Nom (toff) 730 ns
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 11nF @ 25V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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