Input Capacitance (Cies) @ Vce 13nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 690 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 13mA
Max Collector Current 330A
Collector Emitter Voltage (VCEO) 2.7V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Dual
Configuration Half Bridge
Terminal Form UNSPECIFIED
Max Power Dissipation 1.38kW
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ