Input Capacitance (Cies) @ Vce 5.5nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 700 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 75A
Collector Emitter Saturation Voltage 2.2V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 5mA
Max Collector Current 135A
Collector Emitter Voltage (VCEO) 1.2kV
Turn-Off Delay Time 650 ns
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Turn On Delay Time 100 ns
Element Configuration Dual
Configuration Half Bridge
Terminal Form UNSPECIFIED
Max Power Dissipation 560W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Operating Temperature -40°C~150°C TJ