MID550-12A4
RoHS 
RoHS compliant
RoHS compliantPackage Y3-DCB
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
MOD IGBT RBSOA 1200V 670A Y3-DCB
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Dimensions
Width 62mm
Length 110mm
Height 30mm
Technical
VCEsat-Max 2.8 V
Input Capacitance (Cies) @ Vce 26nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type NPT
Turn Off Time-Nom (toff) 690 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 400A
Turn On Time 160 ns
Input Capacitance 26nF
Collector Emitter Saturation Voltage 2.3V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 21mA
Max Collector Current 670A
Collector Emitter Voltage (VCEO) 1.2kV
Turn-Off Delay Time 600 ns
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 2750W
Turn On Delay Time 100 ns
Case Connection ISOLATED
Configuration Single
Number of Elements 1
JESD-30 Code R-XUFM-X5
Pin Count 7
Base Part Number MID
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 2.75kW
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2000
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 10
Package / Case Y3-DCB
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Supply Chain
Factory Lead Time 28 Weeks
Alternative Model
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